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參數資料
| 型號： | FZT600 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR |
| 中文描述： | 2 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 100K |
| 代理商： | FZT600 |
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 FEBRUARY 1997
FEATURES
*
2A continuous current
*
140 VOLT V
CEO
*
Guaranteed h
FE
Specified up to 1A
PART MARKING DETAIL
FZT600
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
160
140
10
4
2
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=100
μ
A
Collector-Base
Breakdown Voltage
V
(BR)CBO
160
V
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
140
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
10
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
0.01
10
μ
A
μ
A
μ
A
μ
A
V
V
V
V
CB
=140V
V
CB
=140V, T
amb
=100°C
V
CES
=140V
V
EB
=8V
I
C
=0.5A, I
=5mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, V
CE
=5V*
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=0.5mA, V
=10V*
I
C
=1A, V
CE
=10V*
I
=100mA, V
CE
=10V
f=20MHz
Collector Cut-Off Current
I
CES
I
EBO
V
CE(sat)
10
Emitter Cut-Off Current
0.1
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation Voltage V
BE(sat)
Base-Emitter Turn-On Voltage
0.75
0.85
1.7
1.1
1.2
1.9
V
BE(on)
h
FE
1.5
1.7
V
Static Forward
Current Transfer
Ratio
GROUP B
1k
2k
1k
100k
5k
10k
5k
10k
20k
10k
100k
Transition Frequency
f
T
150
250
MHz
Output Capacitance
C
obo
T
on
T
off
10
15
MHz
μ
s
μ
s
V
CB
=10V, f=1MHz
I
C
=0.5A, V
=10V
I
B1
=I
B2
=0.5mA
Switching Times
0.75
2.20
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT600
3 - 197
C
C
E
E
B
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FZT600 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR DARLINGTON SOT-223 |
| FZT600A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 2A I(C) | SOT-223 |
| FZT600B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 2A I(C) | SOT-223 |
| FZT600BTA | 功能描述:達林頓晶體管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZT600BTC | 功能描述:達林頓晶體管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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