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參數資料
| 型號： | FZT651 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS |
| 中文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/2頁 |
| 文件大小： | 93K |
| 代理商： | FZT651 |
SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTORS
ISSUE 2 FEBRUARY 1995
FEATURES
*
60 Volt V
CEO
*
3 Amp continuous current
*
Low saturation voltage
COMPLEMENTARY TYPE FZT751
PARTMARKING DETAIL FZT651
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
I
CBO
TYP.
MAX.
UNIT
V
CONDITIONS.
I
C
=100
μ
A
V
(BR)CBO
80
V
(BR)CEO
60
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
μ
A
0.1
10
0.1
0.3
0.6
1.25
μ
A
μ
A
μ
A
V
V
V
V
CB
=60V
V
CB
=60V,
T
amb
=100°C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=3A, I
B
=300mA*
I
C
=1A, I
B
=100mA*
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
I
EBO
V
CE(sat)
0.12
0.43
0.9
V
BE(sat)
V
BE(on)
0.8
1
V
I
C
=1A, V
CE
=2V*
h
FE
70
100
80
40
200
200
170
80
300
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
=100mA, V
CE
=5V
f=100MHz
Transition Frequency
f
T
140
175
MHz
Switching Times
t
on
t
off
C
obo
45
ns
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
800
ns
Output Capacitance
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
30
pF
V
CB
=10V, f=1MHz
FZT651
C
C
E
B
3 - 207
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相關代理商/技術參數 |
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| FZT651 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 |
| FZT651_12 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 |
| FZT651QTA | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 |
| FZT651QTC | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 |
| FZT651TA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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