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參數資料
| 型號： | FZT688B |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | 4 A, 12 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 97K |
| 代理商： | FZT688B |
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
Extremely low equivalent on resistance;
R
CE(sat)
83m
at 3A
*
Gain of 400 at I
C
=3 Amps and very low saturation voltage
APPLICATIONS
*
Flash gun convertors & Battery powered circuits
PARTMARKING DETAIL
COMPLEMENTARY TYPE -
FZT688B
FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
12
V
Collector-Emitter Voltage
12
V
Emitter-Base Voltage
5
V
Peak Pulse Current
10
A
Continuous Collector Current
4
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
12
V
I
C
=100
μ
A
I
C
=10mA*
I
E
=100
μ
A
V
CB
=10V
V
(BR)CEO
V
(BR)EBO
12
V
5
V
Collector Cut-Off Current
I
CBO
0.1
μ
A
μ
A
Emitter Cut-Off Current
I
EBO
0.1
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.04
0.06
0.18
0.35
0.40
V
V
V
V
V
I
C
=0.1A, I
B
=1mA
I
C
=0.1A,I
=0.5mA*
I
C
=1A, I
B
=50mA*
I
C
=3A, I
B
=20mA*
I
C
=4A, I
B
=50mA*
I
C
=3A, I
B
=20mA*
I
C
=3A, V
CE
=2V
I
C
=0.1A, V
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
I
=50mA,V
CE
=5V
f=50MHz
Base-Emitter SaturationVoltage
V
BE(sat)
V
BE(on)
h
FE
1.1
V
Base-Emitter Turn-On Voltage
1.0
V
Static Forward Current Transfer
Ratio
500
400
100
Transition Frequency
f
T
150
MHz
Input Capacitance
C
ibo
C
obo
t
on
t
off
200
pF
V
EB
=0.5Vf=1MHz
V
CB
=10V,f=1MHz
Output Capacitance
40
pF
Switching Times
40
500
ns
ns
I
C
=500mA, I
B1
=50A
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT688B
C
C
E
B
3 - 217
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| FZT688BTA | 功能描述:兩極晶體管 - BJT NPN High Gain & Crnt RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT688BTC | 功能描述:兩極晶體管 - BJT NPN High Gain & Crnt RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT689 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| FZT689B | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-223 制造商:Diodes Incorporated 功能描述:HIGH VOLTAGE TRANSISTOR, NPN, 20V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:500; No. of Pins:4 ;RoHS Compliant: Yes |
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