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參數資料
| 型號： | FZT696B |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | 0.5 A, 180 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/2頁 |
| 文件大小： | 98K |
| 代理商： | FZT696B |
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 4 FEBRUARY 1997
FEATURES
*
250 Volt V
CEO
*
Gain of 500 at I
C
=100mA
*
Very low saturation voltage
APPLICATIONS
*
Darlington replacement
*
Battery powered circuits
PARTMARKING DETAIL
FZT696B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
180
V
Collector-Emitter Voltage
180
V
Emitter-Base Voltage
5
V
Peak Pulse Current
1
A
Continuous Collector Current
0.5
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
180
V
I
C
=100
μ
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
180
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
V
CB
=140V
Collector Cut-Off Current
I
CBO
0.1
μ
A
μ
A
Emitter Cut-Off Current
I
EBO
0.1
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.2
0.2
0.25
V
V
V
I
C
=50mA, I
B
=0.5mA*
I
C
=100mA, I
B
=2mA*
I
C
=200mA, I
B
=5mA*
I
C
=200mA, I
B
=5mA*
I
C
=200mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=5V*
I
=50mA, V
CE
=5V
f=50MHz
Base-Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
0.9
V
Base-Emitter Turn-OnVoltage
0.9
V
Static Forward Current Transfer
Ratio
500
150
Transition Frequency
f
T
70
MHz
Input Capacitance
C
ibo
C
obo
t
on
t
off
200
pF
V
EB
=0.5V, f=1MHz
V
CE
=10V, f=1MHz
I
C
=100mA, I
B1
=10mA
I
B2
=10mA, V
CC
=50V
Output Capacitance
6
pF
Switching Times
80
4400
ns
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT696B
3 - 227
C
C
E
B
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