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參數資料
| 型號： | FZT658 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 0.5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 78K |
| 代理商： | FZT658 |
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - OCTOBER 1995
FEATURES
*
400 Volt V
CEO
*
Low saturation voltage
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT758
FZT658
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
I
C
=100
μ
A
I
C
=10mA*
I
E
=100
μ
A
V
CB
=320V
V
EB
=4V
I
C
=20mA, I
B
=1mA*
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA*
Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
400
V
400
V
5
V
Collector Cut-Off Current
100
nA
Emitter Cut-Off Current
100
nA
Collector-Emitter
Saturation Voltage
0.3
0.25
0.5
V
V
V
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0
V
I
C
=100mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
40
I
C
=1mA, V
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
I
=10mA, V
CE
=20V
f=20MHz
Transition Frequency
f
T
50
MHz
Output Capacitance
C
obo
t
on
t
off
10
130
pF
V
CB
=20V, f=1MHz
I
C
=100mA, V
CC
=100V
I
B1
=10mA, I
B2
=-20mA
Switching Times
ns
3300
ns
*Measured under pulsed conditions. Pulse Width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT658
C
C
E
B
3 - 215
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相關代理商/技術參數 |
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| FZT658 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 |
| FZT658TA | 功能描述:兩極晶體管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT658TC | 功能描述:兩極晶體管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT660 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| FZT660A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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