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參數資料
| 型號： | FZT657 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 88K |
| 代理商： | FZT657 |
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
*
Low saturation voltage
COMPLEMENTARY TYPE - FZT757
PARTMARKING DETAIL - FZT657
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
0.1
μ
A
V
CB
=200V
Emitter Cut-Off Current
I
EBO
0.1
μ
A
V
EB
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0
V
I
C
=100mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
40
50
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
Transition Frequency
f
T
30
MHz
I
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT657
C
C
E
B
3 - 213
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FZT657TA | 功能描述:兩極晶體管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT657TA-CUT TAPE | 制造商:DIODES 功能描述:FZT657 Series NPN 0.5 A 300 V SMT Silicon Medium Power Transistor - SOT-223 |
| FZT657TC | 功能描述:兩極晶體管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT658 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-223 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:2W; DC Collector Current:500mA; DC Current Gain hFE:50; No. of Pins:4 ;RoHS Compliant: Yes |
| FZT658 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 |
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