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參數資料
| 型號： | FZT757 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/2頁 |
| 文件大小： | 90K |
| 代理商： | FZT757 |
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 JANUARY 1996
FEATURES
*
Low saturation voltage
*
300V V
CEO
COMPLEMENTARY TYPE - FZT657
PARTMARKING DETAIL - FZT757
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300
V
I
C
=-100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-0.1
μ
A
V
CB
=-200V
Emitter Cut-Off Current
I
EBO
-0.1
μ
A
V
EB
=-3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0
V
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.0
V
I
C
=-100mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
40
50
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
Transition Frequency
f
T
30
MHz
I
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT757
C
C
E
B
3 - 240
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相關代理商/技術參數 |
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| FZT757TA | 功能描述:兩極晶體管 - BJT PNP High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT757TC | 功能描述:兩極晶體管 - BJT PNP High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT758 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, PNP, SOT-223 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR, PNP, -400V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:2W; DC Collector Current:-500mA; DC Current Gain hFE:50; No. of Pins:4 ;RoHS Compliant: Yes |
| FZT758 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-223 |
| FZT758TA | 功能描述:兩極晶體管 - BJT PNP High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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