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參數(shù)資料
型號: FZT851
廠商: ZETEX PLC
元件分類: 功率晶體管
英文描述: NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
中文描述: 6 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: SOT-223, 4 PIN
文件頁數(shù): 1/3頁
文件大小: 53K
代理商: FZT851
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - OCTOBER 1995
FEATURES
*
*
*
*
Extremely low equivalent on-resistance;
R
CE(sat)
44m
at 5A
6 Amps continuous current, up to 20 Amps peak current
Very low saturation voltages
Excellent h
FE
characteristics specified up to 10 Amps
PARTMARKING DETAILS -
COMPLEMENTARY TYPES -
DEVICE TYPE IN FULL
FZT851
FZT951
FZT853
FZT953
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT851
FZT853
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
150
200
V
Collector-Emitter Voltage
60
100
V
Emitter-Base Voltage
6
6
V
Peak Pulse Current
20
10
A
Continuous Collector Current
6
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
3
W
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT851
FZT853
C
C
E
B
3 - 260
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FZT851QTA 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN MEDIUM POWER TRANSISTOR IN SOT223
FZT851TA 功能描述:兩極晶體管 - BJT NPN High Current RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FZT851TA-CUT TAPE 制造商:DIODES 功能描述:FZT851 Series NPN 6 A 60 V SMT Silicon High Performance Transistor - SOT-223
FZT851TC 功能描述:兩極晶體管 - BJT NPN High Current RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FZT853 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-223 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:130MHz; Power Dissipation Pd:3W; DC Collector Current:6A; DC Current Gain hFE:200; No. of Pins:4 ;RoHS Compliant: Yes
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