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參數(shù)資料
型號: GS8170LW72C-300
廠商: Electronic Theatre Controls, Inc.
英文描述: Low-Noise Operational Amplifier 8-SOIC -40 to 85
中文描述: 35.7西格馬1x1Lp的CMOS的I / O后寫入SigmaRAM
文件頁數(shù): 10/27頁
文件大小: 884K
代理商: GS8170LW72C-300
GS8170LW36/72C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.03 1/2005
10/27
2002, GSI Technology, Inc.
Echo Clock Control in Two Banks of SigmaRAMs
It should be noted that deselection of the RAM via E2 and E3 also deselects the Echo Clock output drivers. The deselection of
Echo Clock drivers is always pipelined to the same degree as output data. Deselection of the RAM via E1 does not deactivate the
Echo Clocks.
In some applications it may be appropriate to pause between banks; to deselect both RAMs with E1 before resuming read
operations. An E1 deselect at a bank switch will allow at least one clock to be issued from the new bank before the first read cycle
in the bank. Although the following drawing illustrates a E1 read pause upon switching from Bank 1 to Bank 2, a write to Bank 2
would have the same effect, causing the RAM in Bank 2 to issue at least one clock before it is needed.
Pipelined Read Bank Switch with E1 Deselect
CMOS Output Driver Impedance Control
Read A
Read B
Read C
Read D
Read E
A
B
C
D
E
Q(A)
Q(C)
Q(D)
Q(B)
Q(C)
CK
Address
ADV
E1
E2 Bank1 E2 Bank1
W
CQ Bank1
DQ_Bank1
CQ1+CQ2
CQ Bank2
DQ_Bank2
Read A
Read B
Deselect
Read D
Read E
A
B
D
E
Q(A)
Q(E)
Q(B)
Q(D)
CK
Address
ADV
E1
E2 Bank1 E2 Bank1
W
CQ_Bank1
DQ_Bank1
CQ1+CQ2
CQ_Bank2
DQ_Bank2
相關(guān)PDF資料
PDF描述
GS8170LW72C-300I Low-Noise Operational Amplifier 8-SOIC -40 to 85
GS8170LW72C-333 Low-Noise Operational Amplifier 8-PDIP -40 to 85
GS832136GE-150IV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136E-200IV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136E-200V 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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