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參數(shù)資料
型號: GS8170LW72C-300
廠商: Electronic Theatre Controls, Inc.
英文描述: Low-Noise Operational Amplifier 8-SOIC -40 to 85
中文描述: 35.7西格馬1x1Lp的CMOS的I / O后寫入SigmaRAM
文件頁數(shù): 7/27頁
文件大小: 884K
代理商: GS8170LW72C-300
GS8170LW36/72C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.03 1/2005
7/27
2002, GSI Technology, Inc.
Special Functions
Burst Cycles
SRAMs provide an on-chip burst address generator that can be utilized, if desired, to simplify burst read or write implementations.
The ADV control pin, when driven high, commands the SRAM to advance the internal address counter and use the counter
generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM
by driving the ADV pin low, into Load mode.
SigmaRAM Pipelined Burst Reads with Counter Wraparound
SigmaRAM Late Write SRAM Burst Writes with Counter Wraparound
Read A
Cont A+1
Cont A+2
Cont A+3
Cont A
Deselect
A
Q(A)
Q(A+1)
Q(A+2)
Q(A+3)
Q(A)
CK
Address
ADV
E1
W
DQA0–DQA8
CQ
Write A+2
Cont A+3
Cont A
Cont A+1
Cont A+2
Deselect
A+2
D(A+2)
D(A+3)
D(A)
D(A+1)
D(A+2)
CK
Address
ADV
E1
W
Ba–Bb
DQ
CQ
相關(guān)PDF資料
PDF描述
GS8170LW72C-300I Low-Noise Operational Amplifier 8-SOIC -40 to 85
GS8170LW72C-333 Low-Noise Operational Amplifier 8-PDIP -40 to 85
GS832136GE-150IV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136E-200IV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136E-200V 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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