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參數資料
| 型號： | HGTG15N120C3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 1200V, UFS Series N-Channel IGBTs |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 139K |
| 代理商： | HGTG15N120C3 |
1
HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3, HGT1S15N120C3S
35A, 1200V, UFS Series N-Channel IGBTs
Features
35A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . 350ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Formerly Developmental Type TA49145.
Description
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3
and HGT1S15N120C3S are MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar tran-
sistor. The much lower on-state voltage drop varies only moder-
ately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Symbol
Packaging
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG15N120C3
TO-247
15N120C3
HGTP15N120C3
TO-220AB
15N120C3
HGT1S15N120C3
TO-262AA
15N120C3
HGT1S15N120C3S
TO-263AB
15N120C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel; i.e.,
HGT1S15N120C3S9A.
C
E
G
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-262AA
JEDEC TO-263AB
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
A
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
A
M
EMITTER
GATE
COLLECTOR
(FLANGE)
June 1997
File Number
4244.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關PDF資料 |
PDF描述 |
|---|---|
| HGTP15N120C3 | 35A, 1200V, UFS Series N-Channel IGBTs |
| HGT1S15N120C3 | 35A, 1200V, UFS Series N-Channel IGBTs |
| HGT1S15N120C3S | 35A, 1200V, UFS Series N-Channel IGBTs |
| HGTG20N100D2 | 20A, 1000V N-Channel IGBT |
| HGTG20N120C3D | 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGTG15N120C3D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG18N120BN | 功能描述:IGBT 晶體管 54A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG18N120BND | 功能描述:IGBT 晶體管 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG18N120BND_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG201N100E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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