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參數(shù)資料
| 型號(hào)： | HGTG15N120C3D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 101K |
| 代理商： | HGTG15N120C3D |
1
May 1997
HGTG15N120C3D
35A, 1200V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
35A, 1200V at T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time at T
J
= 150
o
C . . . . . . . . . . . . . .350ns
Short Circuit Rating
Low Conduction Loss
Formerly Developmental Type TA49133.
Description
The HGTG15N120C3D is a MOS gated high voltage switch-
ing device combining the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop var-
ies only moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
The diode used in anti-Parallel with the IGBT is the same as
the RHRP15120. The IGBT was formerly development type
TA49145.
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG15N120C3D
TO-247
15N120C3D
NOTE: When ordering, use the entire part number.
C
E
G
Packaging
JEDEC STYLE TO-247
INTERSIL CORPRATION’s IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
E
C
G
COLLECTOR
(FLANGE)
File Number
4267.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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| HGTG18N120BN | 功能描述:IGBT 晶體管 54A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| HGTG18N120BND_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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