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參數(shù)資料
| 型號(hào)： | HUF75829D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 18 A, 150 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 122K |
| 代理商： | HUF75829D3 |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
15
20
50
75
100
125
150
0
25
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
175
5
10
0.1
1
2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
10
-5
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
100
300
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 10V
HUF75829D3, HUF75829D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75829D3S | 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76105DK8 | 5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| HUF76112SK8 | 7.5A, 30V, 0.006 Ohm, N-Channel Power MOSFET(7.5A, 30V, 0.006 Ω,N溝道功率MOS場(chǎng)效應(yīng)管) |
| HUF76113DK8 | 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| HUF76113T3ST | 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(4.7A, 30V, 0.031 Ω,N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75829D3S | 功能描述:MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75829D3ST | 功能描述:MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75831SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75831SK8T | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75842P3 | 功能描述:MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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