- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385413 > HY27UA1G1M (Hynix Semiconductor Inc.) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號： | HY27UA1G1M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| 中文描述： | 1Gbit的（128Mx8bit / 64Mx16bit）NAND閃存 |
| 文件頁數(shù)： | 7/43頁 |
| 文件大小： | 729K |
| 代理商： | HY27UA1G1M |
第1頁第2頁第3頁第4頁第5頁第6頁當(dāng)前第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁
Rev 0.5 / Oct. 2004
7
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
MEMORY ARRAY ORGANIZATION
The memory array is made up of NAND structures where 16 cells are connected in series.
The memory array is organized in blocks where each block contains 32 pages. The array is split into two areas, the
main area and the spare area. The main area of the array is used to store data whereas the spare area is typically used
to store Error Correction Codes, software flags or Bad Block identification.
In x8 devices the pages are split into a main area with two half pages of 256 Bytes each and a spare area of 16 Bytes.
In the x16 devices the pages are split into a 256 Word main area and an 8 Word spare area. Refer to Figure 8, Memory
Array Organization.
Bad Blocks
The NAND Flash 528 Byte/ 264 Word Page devices may contain Bad Blocks, that is blocks that contain one or more
invalid bits whose reliability is not guaranteed. Additional Bad Blocks may develop during the lifetime of the device.
The Bad Block Information is written prior to shipping (refer to Bad Block Management section for more details).
The values shown include both the Bad Blocks that are present when the device is shipped and the Bad Blocks that
could develop later on.
These blocks need to be managed using Bad Blocks Management, Block Replacement or Error Correction Codes.
Figure 7. Memory Array Organization
1st half Page
(256 bytes)
2nd half Page
(256 bytes)
Block
Page
512 Bytes
16
Bytes
8 bits
8 bits
512 Bytes
16
Bytes
Page Buffer, 528 Bytes
x8 DEVICES
Block= 32 Pages
Page= 528 Bytes (512+16)
Main Area
Block
Page
256 Words
8
Words
16 bits
16 bits
256 Words
8
Words
Page Buffer, 264 Words
x16 DEVICES
Block= 32 Pages
Page= 264 Bytes (256+8)
SpaeAea
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27UAxxx | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SS08561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SS561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US16561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27UAXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27UF081G2A-C | 制造商:SK Hynix Inc 功能描述: |
| HY27UF081G2A-F(P) | 制造商:SK Hynix Inc 功能描述: |
| HY27UF081G2A-S(P) | 制造商:SK Hynix Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。