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參數資料
| 型號： | HY27US561M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| 中文描述： | 片256Mbit（32Mx8bit / 16Mx16bit）NAND閃存 |
| 文件頁數： | 1/44頁 |
| 文件大小： | 733K |
| 代理商： | HY27US561M |
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This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 0.7 / Oct. 2004
1
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Document Title
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory
Revision History
No.
History
Draft Date
Remark
0.0
Initial Draft
Jul. 10. 2003
Preliminary
0.1
Renewal Product Group
Dec. 08. 2003
Preliminary
0.2
Append 1.8V Operation Product to Data sheet
Dec. 08. 2003
Preliminary
0.3
Insert Spare Enable function for GND Pin(#6)
- In case of Reading or Programming, GND Pin(#6) should be Low
or High.
- Change the test condition of Stand-by current-Refer to Table 13.
Change CSP Package name & thickness
- Name : VFBGA -> FBGA
- Thickness : 1.0mm(max) -> 1.2mm(max)
Mar. 08. 2004
Preliminary
0.4
1) Delete Cache Program Mode
2) Modify the description of Device Operations
- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read
Disabled(Enabled) (Page23)
Jun. 01. 2004
Preliminary
0.5
1) change FBGA dimension
:
Thickness : 1.2mm(max) -> 1.0mm(max)
2) Edit Fig.33 read operation with CE don't care
Sep. 24. 2004
Preliminary
0.6
1) Change TSOP1,WSOP1,FBGA package dimension
- Change TSOP1,WSOP1,FBGA mechanical data
- Inches parameter has been excluded from the mechanical data table
Oct. 18. 2004
Preliminary
0.7
1) Change TSOP1, WSOP1, FBGA package dimension
2) Edit TSOP1, WSOP1 package figures
3) Change FBGA package figure
Oct. 20. 2004
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PDF描述 |
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| HY27SS16561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US08561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SSxxx | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HY27USXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY29DL162 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M(X8/X16)|3.0V DUAL BANK|70|NOR FLASH - 16M |
| HY29DL162BF-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
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