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參數(shù)資料

Rev 0.7 / Oct. 2004

HY27SS(08/16)561M Series

HY27US(08/16)561M Series

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Note: 1. A0-A7 is the address in the Spare Memory area, where A0-A3 are valid and A4-A7 are don't care.

2. Only address cycle 4 is required.

Figure 28. Read C Operation, One Page AC Waveform

I/O

CLE

ALE

Data M

Data

Last

tWHBH

tWHALL

tBHRL

tALLRL2

Command

Code

Address M Input

Busy

Data Output from M to

Last Byte or Word in Area C

Add. M

cycle 1

50h

Add. M

cycle 2

Add. M

cycle 3

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HY27USXXX	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY29DL162	制造商:未知廠家制造商全稱:未知廠家功能描述:16M(X8/X16)\|3.0V DUAL BANK\|70\|NOR FLASH - 16M
HY29DL162BF-12	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
HY29DL162BF-12I	制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
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