- 您現在的位置：買賣IC網 > PDF目錄385414 > HY27US561M (Hynix Semiconductor Inc.) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash PDF資料下載
參數資料
| 型號： | HY27US561M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| 中文描述： | 片256Mbit（32Mx8bit / 16Mx16bit）NAND閃存 |
| 文件頁數： | 13/44頁 |
| 文件大小： | 733K |
| 代理商： | HY27US561M |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁
Rev 0.7 / Oct. 2004
13
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been
executed in Area B the pointer returns automatically to Area A.
The pointer operations can also be used before a program operation, that is the appropriate code (00h, 01h or 50h)
can be issued before the program command 80h is issued (see Figure 9).
Figure 8. Pointer Operation
Figure 9. Pointer Operations for Programming
Area A
(00h)
Area B
(01h)
Area C
(50h)
Bytes 0-255
Bytes 256-511
Bytes
512-527
A
B
C
Pointer
(00h, 01h, 50h)
x8 Devices
Page Buffer
Area C
(50h)
Words
256-263
C
x16 Devices
Page Buffer
Area A
(00h)
Words 0-255
A
Pointer
(00h, 50h)
10h
80h
01h
Address
Inputs
80h
Data
Input
10h
Address
Inputs
01h
Data
Input
AREA B
AREA B, C can be programmed depending on how much data is input.
The 01h command must be re-issued before each program.
10h
80h
00h
Address
Inputs
80h
Data
Input
10h
Address
Inputs
00h
Data
Input
AREA A
AREA A, B, C can be programmed depending on how much data is input.
Subsequent 00h commands can be omitted.
10h
80h
50h
Address
Inputs
80h
Data
Input
10h
Address
Inputs
50h
Data
Input
AREA C
Only Areas C can be programmed.
Subsequent 50h commands can be omitted.
I/O
I/O
I/O
相關PDF資料 |
PDF描述 |
|---|---|
| HY27SS16561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US08561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SSxxx | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS08121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS16121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY27USXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY29DL162 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M(X8/X16)|3.0V DUAL BANK|70|NOR FLASH - 16M |
| HY29DL162BF-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
發布緊急采購，3分鐘左右您將得到回復。