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參數(shù)資料
| 型號(hào)： | HY27US561M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| 中文描述： | 片256Mbit（32Mx8bit / 16Mx16bit）NAND閃存 |
| 文件頁(yè)數(shù)： | 20/44頁(yè) |
| 文件大小： | 733K |
| 代理商： | HY27US561M |
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Rev 0.7 / Oct. 2004
20
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
P/E/R Controller Bit (SR5)
The Program/Erase/Read Controller bit indicates whether the P/E/R Controller is active or inactive. When the P/E/R
Controller bit is set to '0', the P/E/R Controller is active (device is busy); when the bit is set to '1', the P/E/R Controller
is inactive (device is ready).
Error Bit (SR0)
The Error bit is used to identify if any errors have been detected by the P/E/R Controller.
The Error Bit is set to '1' when
a program or erase operation has failed to write the correct data
to the memory. If the Error Bit is set to '0' the opera-
tion
has completed successfully.
SR4, SR3 and SR2 are Reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27SS16561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US08561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SSxxx | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS08121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS16121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27USXXX | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY29DL162 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:16M(X8/X16)|3.0V DUAL BANK|70|NOR FLASH - 16M |
| HY29DL162BF-12 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-12I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
| HY29DL162BF-70 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory |
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