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參數資料
| 型號： | HY29F040A |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| 中文描述： | 為512k × 8位CMOS 5.0伏只，扇區擦除閃存 |
| 文件頁數： | 9/40頁 |
| 文件大小： | 282K |
| 代理商： | HY29F040A |
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HY29F040A
writing the "set-up" command. Two more 'unlock'
write cycles are then followed by the chip erase
command.
Upon executing the Chip Erase command
sequence, the device’s internal state machine
executes an internal erase algorithm. The system is
not required to provide further controls or timings.
The device will automatically provide adequate in-
ternally generated erase pulses and verify chip
erase within the proper cell margins. During chip
erase, all sectors of the device are erased except
protected sectors.
During Chip Erase, data bit DQ7 shows a logical
“0”. This operation is known as /Data Polling. The
erase operation is completed when the data on DQ7
is a logical “1” (see Write Operation Status sec-
tion). Upon completion of the Chip Erase
operation, the device returns to read mode. At this
time, the address pins are no longer latched. Note
that /Data Polling must be performed at a sector
address within any of the sectors being erased and
not a protected sector to ensure that DQ7 returns
a logical “1” upon completion of the Chip Erase
operation.
Figure 2 illustrates the Chip Erase Algorithm
using typical command strings and bus operations.
The device will ignore any commands written to
the chip during execution of the internal Chip Erase
algorithm.
Sector Erase Command
Sector erase is a six bus cycle operation (see Table
5). There are two 'unlock' write cycles that are fol-
lowed by writing the "set-up" command. Two more
"unlock" write cycles are then followed by the sec-
tor erase command. The sector address (any ad-
dress location within the desired sector) is latched
on the falling edge of /WE, while the command data
is latched on the rising edge of /WE. An internal de-
vice timer initiates Sector Erase operation after 100
m
s
±
20% (80
m
s to 120
m
s) from the rising edge of
the /WE pulse for the last Sector Erase command
entered on the device.
Upon executing the Sector Erase command
sequence, the device’s internal state machine
executes an internal erase algorithm. The system is
not required to provide further controls or
timings. The device will automatically provide
adequate internally generated erase pulses and
verify sector erase within the proper cell margins.
Protected sectors of the device will not be erased,
even if they are selected with the Sector Erase
command.
Multiple sectors can be erased sequentially by writ-
ing the sixth bus cycle command of the Sector Erase
command for each sector to be erased. The time
between initiation of the next Sector Erase com-
mand must be less than 80
m
s to guarantee ac-
ceptance of the command by the internal state ma-
chine. The time-out window can be monitored via
the write operation status pin DQ3 (refer to the Write
Operation Status section for Sector Erase Timer
operation). It is recommended that CPU interrupts
be disabled during this time to ensure that the sub-
sequent Sector Erase commands can be initiated
within the 80
m
s window. The interrupts can be re-
enabled after the last Sector Erase command is
written. As mentioned above, an internal device timer
will initiate the Sector Erase operation 100
m
s
±
20%
(80
m
s to 120
m
s) from the rising edge of the last /
WE pulse. The Sector Erase Timer Write Operation
Status pin (DQ3) can be used to monitor the time out
window. If another falling edge of the /WE occurs
within the 100
m
s time-out window, the internal de-
vice timer is reset. Loading the sector erase buffer
may be done in any sequence and with any num-
ber of sectors.
Any command other than Sector Erase or Erase
Suspend or Erase Resume during this period and
afterwards will reset the device to read mode, ig-
noring the previous command string. Resetting the
device after it has begun execution of a Sector
Erase operation will result in the data in the oper-
ated sectors being undefined. In this case, restart
the Sector Erase operation on those sectors and
allow them to complete the Erase operation.
When erasing a sector or multiple sectors, the data
in the unselected sectors remains unaffected. The
system is not required to provide any controls or
timings during these operations.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F040AC-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F040AC-12E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F040AC-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F040AC-15 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F040AC-15E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
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