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參數資料
| 型號： | IRF6665 |
| 廠商： | International Rectifier |
| 英文描述： | DIGITAL AUDIO MOSFET |
| 中文描述： | 數字音頻MOSFET的 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 229K |
| 代理商： | IRF6665 |
www.irf.com
1
10/11/04
IRF6665
Notes
through are on page 2
DirectFET
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing
techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate
resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and
resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage
ringing that accompanies fast current transients. The DirectFET TM package is compatible with existing layout geometries used in power
applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing method and processes. The DirectFET TM package also allows dual sided cooling to maximize thermal
transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient,
robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor
T
J
Operating Junction and
T
STG
Storage Temperature Range
Features
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier applications
Low R
DS(on)
for improved efficiency
Low Q
g
for better THD and improved efficiency
Low Q
rr
for better THD and lower EMI
Low package stray inductance for reduced ringing and lower EMI
Can deliver up to 100W per channel into 8
with no heatsink
Dual sided cooling compatible
Compatible with existing surface mount technologies
Lead and Bromide Free
Units
V
I
D
@ T
C
= 25°C
A
W
W/°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
–––
12.5
20
–––
1.4
58
–––
–––
3.0
–––
°C/W
42
2.2
1.4
Max.
100
± 20
4.2
3.4
34
19
-40 to + 150
0.017
V
DS
R
DS(on)
typ. @ V
GS
= 10V
Q
g
typ.
R
G(int)
typ.
100
53
8.7
1.9
V
m
nC
Key Parameters
SQ
SX
ST
SH
MQ
MX
MT
MN
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF6665PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Latest MOSFET Silicon technology |
| IRF6665TR1 | 功能描述:MOSFET DIGITAL AUDIO 100V 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6665TR1PBF | 功能描述:MOSFET MOSFT 100V 62mOhm 19A 8.7nC Qg for Aud RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6665TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6665TRPBF | 功能描述:MOSFET DIGITAL AUDIO 100V 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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