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參數資料
| 型號： | IRF7314Q |
| 英文描述： | -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package |
| 中文描述： | - 20V的雙P溝道HEXFET功率MOSFET的SO - 8封裝 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 184K |
| 代理商： | IRF7314Q |
IRF730AS/L
Static @ T
J
= 25°C (unless otherwise specified)
2
www.irf.com
Parameter
Min. Typ. Max. Units
3.1
–––
–––
––– 22 I
D
= 3.5A
–––
–––
5.8
–––
–––
9.3
–––
10
–––
–––
22
–––
–––
20
–––
–––
16
–––
–––
600
–––
–––
103
–––
–––
4.0
–––
–––
890
–––
–––
30
–––
–––
45
–––
Conditions
V
DS
= 50V, I
D
= 3.3A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 320V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 200V
I
D
= 3.5A
R
G
= 12
R
D
= 57
,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 320V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 320V
pF
Parameter
Min. Typ. Max. Units
400
–––
Conditions
V
GS
= 0V, I
D
= 250μA
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.5 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
2.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
–––
V
–––
–––
–––
–––
–––
–––
1.0
4.5
25
250
100
-100
V
V
GS
= 10V, I
D
= 3.3A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 400V, V
GS
= 0V
V
DS
= 320V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
ns
Parameter
Typ.
–––
–––
–––
Max.
290
5.5
7.4
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 5.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.5A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
370
1.6
1.6
550
2.4
V
ns
μC
Diode Characteristics
5.5
22
A
Parameter
Typ.
–––
–––
Max.
1.7
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
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