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參數(shù)資料
| 型號： | IRF7314Q |
| 英文描述： | -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package |
| 中文描述： | - 20V的雙P溝道HEXFET功率MOSFET的SO - 8封裝 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 184K |
| 代理商： | IRF7314Q |
IRF730AS/L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
10
100
1000
BY R
DS(on)
OPERATION IN THIS AREA LIMITED
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
0
5
Q , Total Gate Charge (nC)
10
15
20
25
0
4
8
12
16
20
V
G
I =
SEE FIGURE
FOR TEST CIRCUIT
13
5.5
V
= 80V
DS
V
= 200V
DS
V
= 320V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
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| IRF7314TRPBF | 功能描述:MOSFET MOSFT DUAL PCh -20V 5.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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