- 您現在的位置：買賣IC網 > PDF目錄360931 > IRF732FI TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | TO-220AB PDF資料下載
參數資料
| 型號： | IRF732FI |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 3A條（丁）| TO - 220AB現有 |
| 文件頁數： | 10/10頁 |
| 文件大小： | 184K |
| 代理商： | IRF732FI |
IRF730AS/L
10
www.irf.com
Tape & Reel Information
D
2
Pak
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 19mH
R
G
= 25
, I
AS
= 5.5A. (See Figure 12)
I
SD
≤
5.5A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Uses IRF730A data and test conditions
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 5/00
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相關PDF資料 |
PDF描述 |
|---|---|
| IRF733FI | TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3A I(D) | TO-220AB |
| IRF734 | 450V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
| IRF7341Q | 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
| IRF7341QTR | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DSS | 5.1A I(D) | SO |
| IRF7342D2 | -55V FETKY - MOSFET and Schottky Diode in a SO-8 package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF732R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB |
| IRF733 | 制造商:Motorola Inc 功能描述: |
| IRF7331 | 功能描述:MOSFET 2N-CH 20V 7A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7331PBF | 功能描述:MOSFET 20V DUAL N-CH HEXFET 30mOhms 13nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7331PBF_08 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Ultra Low On-Resistance Dual N-Channel MOSFET |
發布緊急采購，3分鐘左右您將得到回復。