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參數(shù)資料
| 型號： | IRF9530SMD |
| 英文描述： | P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P溝道功率MOS場效應(yīng)管,HI-REL應(yīng)用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) |
| 中文描述： | P溝道功率MOSFET為高可靠性應(yīng)用（減振鋼板基本：- 100V的，身份證（續(xù)）：- 8A型，的Rds（on）：0.35Ω）性（P溝道功率馬鞍山場效應(yīng)管，高可靠性應(yīng)用（減振鋼板基本： - 100V的，身份證（續(xù)）：- 8A型，的Rds（on）：0.35Ω）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 22K |
| 代理商： | IRF9530SMD |
IRF9530SMD
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 07/00
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 5A
I
D
= 8A
I
D
= 250
m
A
I
DS
= 5A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 8A
V
DS
= 0.5BV
DSS
I
D
= 8A
V
DD
= 50V
I
D
= 8A
R
G
= 7.5
W
I
S
= 8A
V
GS
= 0
I
S
= 8A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
0.1
0.35
0.4
4
2
3
25
250
100
-100
860
350
125
12.5
29
1.0
2
6.3
27
60
140
140
140
8
32
4.7
300
3
8.7
8.7
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
(from 6mm down source lead to centre of source bond pad)
(from 6mm down drain lead pad to centre of die)
PACKAGE CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF9530S | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
| IRF9530SMD | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
| IRF9632 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 3A I(D) | TO-220AB |
| IRF9641 | TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 11A I(D) | TO-220AB |
| IRF9642 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF9530SPBF | 功能描述:MOSFET P-Chan 100V 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9530STRL | 功能描述:MOSFET P-Chan 100V 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9530STRLPBF | 功能描述:MOSFET P-Chan 100V 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9530STRR | 功能描述:MOSFET P-Chan 100V 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9530STRRPBF | 功能描述:MOSFET P-Chan 100V 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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