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參數(shù)資料
| 型號(hào)： | IRFZ24N |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-channel enhancement mode TrenchMOS transistor(N溝道增強(qiáng)型 TrenchMOS 晶體管) |
| 中文描述： | 17 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 64K |
| 代理商： | IRFZ24N |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
IRFZ24N
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
2.0
1.0
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.04
-
-
60
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
70
157
UNIT
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
μ
A
μ
A
μ
A
μ
A
V
m
m
T
j
= 175C
I
GSS
Gate source leakage current
V
GS
=
±
10 V; V
DS
= 0 V
T
j
= 175C
±
V
(BR)GSS
R
DS(ON)
Gate source breakdown voltage I
G
=
±
1 mA;
Drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A
T
j
= 175C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
Q
g
Total gate charge
Q
gs
Gate-cource charge
Q
gd
Gate-drain (miller) charge
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 10 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
1
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
365
110
60
-
-
-
9
16
14
13
3.5
MAX.
-
500
135
85
19
5.2
7.2
14
21
25
20
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
nH
V
DD
= 44 V; I
D
= 20 A; V
GS
= 10 V
V
DD
= 30 V; I
D
= 10 A;
V
= 10 V; R
G
= 10
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
MIN.
-
TYP.
-
MAX.
17
UNIT
A
-
-
-
-
-
68
1.2
-
-
A
V
ns
μ
C
I
F
= 19.7 A; V
GS
= 0 V
I
F
= 19.7 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.95
32
0.12
February 1999
2
Rev 1.000
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