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參數(shù)資料
| 型號： | IRFZ48 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel enhancement mode TrenchMOS transistor |
| 中文描述： | N溝道增強模式TrenchMOS晶體管 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 65K |
| 代理商： | IRFZ48 |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
IRFZ48N
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
8
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFZ48N | N-channel enhancement mode TrenchMOS transistor |
| IRFZ48NS | Advanced Process Technology |
| IRFZ48 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) |
| IRFZ48R | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) |
| IRFZ48VS | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFZ48_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFZ48L | 功能描述:MOSFET N-CH 60V 50A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFZ48LPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFZ48N | 功能描述:MOSFET MOSFET, 55V, 64A, 14 mOhm, 54 nC Qg, TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ48NL | 功能描述:MOSFET N-CH 55V 64A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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