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參數資料
| 型號： | IRFZ48NS |
| 廠商： | International Rectifier |
| 英文描述： | Advanced Process Technology |
| 中文描述： | 先進的工藝技術 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | IRFZ48NS |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
IRFZ48N
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP.
-
MAX.
64
UNIT
A
-
-
-
-
-
-
210
1.2
-
-
-
A
V
V
ns
μ
C
I
F
= 25 A; V
GS
= 0 V
I
F
= 65 A; V
GS
= 0 V
I
F
= 65 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.95
1.0
57
0.14
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 65 A; V
≤
25 V;
V
GS
= 10 V; R
GS
= 50
; T
mb
= 25 C
MIN.
-
TYP.
-
MAX.
200
UNIT
mJ
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
5 V
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
February 1999
3
Rev 1.000
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相關代理商/技術參數 |
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| IRFZ48NSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 64A 3PIN D2PAK - Bulk |
| IRFZ48NSPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 14mOhms 54nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ48NSPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes |
| IRFZ48NSTRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK T/R |
| IRFZ48NSTRLPBF | 功能描述:MOSFET MOSFT 55V 64A 14mOhm 54nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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