欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號： IS42S32400A-7T
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述： 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
封裝： PLASTIC, TSOP2-86
文件頁數(shù)： 19/66頁
文件大小： 556K
代理商： IS42S32400A-7T
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
19
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol
I
IL
Parameter
Input Leakage Current
Test Condition
0V
≤
V
IN
≤
V
DD
, with pins other than
the tested pin at 0V
Output s disabled, 0V
≤
V
OUT
≤
V
DD
I
OUT
= –2 mA
I
OUT
= +2 mA
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
Speed
Min.
–5
Max.
5
Unit
μA
I
OL
V
OH
V
OL
I
DD1
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
(1,2)
–5
2.4
—
5
—
0.4
μA
V
V
CAS
atency = 3
Com.
Ind.
Com.
Ind.
Com.
Ind.
Com.
Ind.
-7
-7
-10
-10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
120
140
110
120
1
1
.6
.6
11
5
7
4
6
3
5
28
17
20
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
DD2P
Precharge Standby Current
CKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
)
I
DD2PS
(In Power-Down Mode)
t
CK
=
∞
I
DD2N
I
DD2NS
Precharge Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
Com.
Ind.
Com.
Ind.
Com.
Ind.
I
DD3P
Active Standby Current
CKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
)
Ind.
t
CK
=
∞
I
DD3PS
(In Power-Down Mode)
I
DD3N
I
DD3NS
Active Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
Com.
Ind.
I
DD4
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
CAS
atency = 3
Com.
Ind.
Com.
Ind.
-7
-7
-10
-10
—
—
—
—
120
140
110
120
mA
mA
mA
mA
CAS
atency = 2
Com.
Ind.
Com.
Ind.
-7
-7
-10
-10
—
—
—
—
90
110
80
100
mA
mA
mA
mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between Vdd and Vss for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Idd
1
and Idd
4
depend on the output load. The maximum values for Idd
1
and Idd
4
are obtained with the output open state.
相關(guān)PDF資料
PDF描述
IS42S32400A-7TI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7TL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS61C256AH-8J x8 SRAM
IS61C256AH-8N x8 SRAM
IS61C256AH-8T x8 SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32400A-7TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S32400A-7TLI 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S32400B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-6B 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 166MHZ 90FBGA
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*
主站蜘蛛池模板： 商河县| 赣榆县| 凤凰县| 晋宁县| 深泽县| 武川县| 武山县| 遵义县| 平阳县| 新乐市| 拉萨市| 长垣县| 同德县| 连江县| 石家庄市| 循化| 昌黎县| 神农架林区| 柳林县| 宣恩县| 白城市| 工布江达县| 池州市| 佛冈县| 镇巴县| 旬阳县| 从江县| 孝义市| 台中市| 泰州市| 乌拉特前旗| 宣恩县| 林口县| 集安市| 酉阳| 聂拉木县| 周宁县| 清水河县| 威宁| 从化市| 玛沁县|