欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IS42S32400A-7T
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述: 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
封裝: PLASTIC, TSOP2-86
文件頁數: 34/66頁
文件大小: 556K
代理商: IS42S32400A-7T
ISSI
34
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
same bank. The PRECHARGE command should be issued
x
cycles before the clock edge at which the last desired data
element is valid, where
x
equals the CAS latency minus one.
This s shown n the READ to PRECHARGE diagram for each
possible CAS latency; data element
n
+ 3 is either the last of
a burst of four or the last desired of a longer burst. Following
the PRECHARGE command, a subsequent command to the
same bank cannot be issued until t
RP
is met. Note that part
of the row precharge time is hidden during the access of the
last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the opti-
mum time (as described above) provides the same opera-
tion that would result from the same fixed-length burst with
auto precharge. The disadvantage of the PRECHARGE
command is that it requires that the command and address
buses be available at the appropriate time to issue the
command; the advantage of the PRECHARGE command is
that it can be used to truncate fixed-length or full-page
bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST
TERMINATE command should be issued
x
cycles before
the clock edge at which the last desired data element is
valid, where
x
equals the CAS latency minus one. This is
shown in the READ Burst Termination diagram for each
possible CAS latency; data element
n
+ 3 is the last desired
data element of a longer burst.
相關PDF資料
PDF描述
IS42S32400A-7TI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7TL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS61C256AH-8J x8 SRAM
IS61C256AH-8N x8 SRAM
IS61C256AH-8T x8 SRAM
相關代理商/技術參數
參數描述
IS42S32400A-7TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S32400A-7TLI 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S32400B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-6B 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 166MHZ 90FBGA
主站蜘蛛池模板: 洞头县| 江源县| 五指山市| 思茅市| 马边| 沛县| 凉城县| 安丘市| 抚州市| 鄂托克旗| 玉溪市| 湘潭市| 内乡县| 嘉黎县| 吉水县| 华宁县| 石河子市| 明水县| 万州区| 陵水| 沁水县| 龙岩市| 新泰市| 梧州市| 榕江县| 钟山县| 麻江县| 靖西县| 兰溪市| 辽宁省| 怀仁县| 洱源县| 安远县| 盐山县| 班戈县| 锡林浩特市| 昂仁县| 乡宁县| 鄂温| 宁化县| 盈江县|