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參數資料
| 型號： | IXFK28N60 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 28 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264AA, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 70K |
| 代理商： | IXFK28N60 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
IXFH/ IXFT
IXFK
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
600
600
600
600
V
V
20
30
20
30
V
V
T
C
= 25 C, Chip capability
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
26
28
A
A
A
104
26
112
28
50
1.5
50
1.5
mJ
J
dv/dt
I
S
T
J
150 C, R
G
= 2
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
,
5
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
360
416
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
300
C
M
d
Weight
Mounting torque
1.13/10
0.9/6
Nm/lb.in.
6
10
g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
600
V
V
2
4.5
200
nA
T
J
= 25 C
T
J
= 125 C
25
1
A
mA
R
DS(on)
0.25
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
TAB = Drain
98511B (7/00)
V
DSS
600 V
600 V
t
rr
250 ns
I
D25
26 A
28 A
R
DS(on)
0.25
0.25
IXFH 26N60/IXFT 26N60
IXFK 28N60
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
TO-264 AA (IXFK)
S
G
D
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
Features
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Preliminary data
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFK30N100Q2 | 功能描述:MOSFET 30 Amps 1000V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK30N100Q2_08 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q2-Class |
| IXFK30N110P | 功能描述:MOSFET 30 Amps 1100V 0.3600 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK30N50Q | 功能描述:MOSFET 30 Amps 500V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK320N17T2 | 功能描述:功率驅動器IC GigaMOS Trench T2 HiperFET PWR MOSFET RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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