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參數資料
| 型號： | IXFN26N90 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs Single Die MOSFET |
| 中文描述： | 26 A, 900 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC-4 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 141K |
| 代理商： | IXFN26N90 |
1 - 4
2000 IXYS All rights reserved
Features
International standard package
miniBLOC,
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
900
3.0
V
V
5.0
200
nA
T
J
= 25 C
T
J
= 125 C
100
A
2
mA
R
DS(on)
26N90
25N90
0.30
0.33
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
900
900
V
V
20
30
V
V
T
C
= 25 C
26N90
25N90
26N90
25N90
26N90
25N90
26
25
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
104
100
26
25
A
I
AR
T
C
= 25 C
A
E
AR
E
AS
dv/dt
T
C
= 25 C
T
C
= 25 C
I
S
T
J
150 C, R
G
= 2
T
C
= 25 C
64
mJ
3
J
I
, di/dt 100 A/ s, V
DD
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
600
W
-55 ... +150
C
C
C
150
-55 ... +150
T
J
V
ISOL
1.6 mm (0.63 in) from case for 10 s
-
C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
97526E (10/99)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
V
DSS
900 V
900 V
I
D (cont)
26 A
25 A
R
DS(on)
0.30
0.33
t
rr
250 ns
250 ns
IXFN 26N90
IXFN 25N90
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFN-26N90 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFETTM Power MOSFETs Single Die MOSFET |
| IXFN27N80 | 功能描述:MOSFET 800V 27A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN27N80Q | 功能描述:MOSFET 27 Amps 800V 0.32 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN280N07 | 功能描述:MOSFET 280 Amps 70V 0.006 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN280N07_08 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Single Die MOSFET |
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