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參數(shù)資料
| 型號： | IXFN27N80Q |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs Q-Class |
| 中文描述： | 27 A, 800 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 108K |
| 代理商： | IXFN27N80Q |
2001 IXYS All rights reserved
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
TAB = Drain
Features
International standard package
Epoxy
meet
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
IXYS advanced low Q
g
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package nductance
Fast ntrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and ighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
μ
A
800
V
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±
20 V
DC
, V
DS
= 0
2.5
4.5
V
±
100
nA
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
100
2
μ
A
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
0.32
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
800
V
800
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
27
A
108
A
27
A
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
60
2.5
mJ
J
I
S
5
V/ns
P
D
T
J
T
JM
T
stg
V
ISOL
520
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
98813 (04/01)
HiPerFET
TM
Power MOSFETs
Q-Class
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data sheet
IXFN 27N80Q
V
DSS
I
D25
R
DS(on)
= 800
= 27
= 320 m
V
A
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| IXFN280N07 | 功能描述:MOSFET 280 Amps 70V 0.006 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IXFN300N10P | 功能描述:MOSFET Polar Power MOSFET HiPerFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN30N110P | 功能描述:MOSFET 30 Amps 1100V 0.3600 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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