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參數資料
| 型號： | IXGH22N50BU1S |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT with Diode |
| 中文描述： | 44 A, 500 V, N-CHANNEL IGBT |
| 封裝： | TO-247, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 70K |
| 代理商： | IXGH22N50BU1S |
1997 IXYS All rights reserved
Preliminary data
HiPerFAST
with Diode
Combi P
TM
IGBT
ack
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
V
GE(th)
CES
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
500
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
8
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.1
2.5
V
Features
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
HiPerFAST
TM
HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Space savings (two devices in one
package)
High power density
Suitable for surface mounting
Very low switching losses for high
frequency applications
Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
500
500
V
V
V
GES
V
GEM
Continuous
Transient
±
20
±
30
V
V
I
C25
I
C90
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
44
22
88
A
A
A
SSOA
(RBSOA)
V
= 15 V, T
= 125
°
C, R
= 22
Clamped inductive load, L = 100
μ
H
I
= 44
@ 0.8 V
CES
A
P
C
T
C
= 25
°
C
150
W
T
J
T
T
stg
-55 ... +150
°
C
°
C
°
C
JM
JM
150
-55 ... +150
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Weight
Mounting torque, TO-247 AD
1.13/10 Nm/lb.in.
TO-247 SMD
TO-247 AD
4
6
g
g
C (TAB)
GCE
G
E
C (TAB)
V
CES
I
C(25)
V
CE(sat)typ
=
t
fi(typ)
= 500 V
=
44 A
2.1 V
= 55 ns
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
*Add suffix letter "S" for surface mountable
package
TO-247 SMD*
TO-247 AD
97509(2/97)
IXGH22N50U1
IXGH22N50U1S
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相關代理商/技術參數 |
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| IXGH22N50C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 44A I(C) | TO-247AD |
| IXGH240N30PB | 功能描述:IGBT 晶體管 240 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH24N120C3 | 功能描述:IGBT 晶體管 48 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH24N120C3H1 | 功能描述:IGBT 晶體管 High Frequency Range 40khz C-IGBT w/Diode RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH24N120IH | 功能描述:IGBT 晶體管 24 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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