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參數資料
| 型號： | IXGR24N60C |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:24; Connector Shell Size:24; Connecting Termination:Crimp; Circular Shell Style:Right Angle Plug; Body Style:Right Angle |
| 中文描述： | 42 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 56K |
| 代理商： | IXGR24N60C |
2002 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
= 2.5 V
t
fi(typ)
=
= 600 V
= 42 A
60 ns
HiPerFAST
TM
IGBT
ISOPLUS247
TM
(Electrically Isolated Back Surface)
Preliminary data sheet
ISOPLUS 247
E153432
G = Gate,
E = Emitter
C = Collector
* Patent pending
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
600
V
V
V
GES
V
GEM
Continuous
Transient
±
20
±
30
V
V
I
C25
I
C110
I
CM
T
C
= 25
°
C
T
C
= 110
°
C
T
C
= 25
°
C, 1 ms
42
22
80
A
A
A
SSOA
(RBSOA)
V
= 15 V, T
= 125
°
C, R
= 22
Clamped inductive load, L = 100
μ
H
I
= 48
@ 0.8 V
CES
A
P
C
T
C
= 25
°
C
80
W
T
J
T
JM
T
stg
-40 ... +150
°
C
°
C
°
C
150
-40 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS, t = 1minute leads-to-tab 2500
V
Weight
5
g
GCE
Isolated Backside*
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
μ
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
μ
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 150
°
C
200
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
=
I
T
, V
GE
= 15 V (see note 1)
2.1
2.5
V
Features
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
IXGR 24N60C
98706 (02/02)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGR24N60CD1 | 功能描述:IGBT 晶體管 42 Amps 600 V 2.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGR32N170AH1 | 功能描述:IGBT 晶體管 17 Amps 1700V 5.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGR32N170H1 | 功能描述:IGBT 晶體管 17 Amps 1700V 5.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGR32N60C | 功能描述:IGBT 晶體管 60 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGR32N60CD1 | 功能描述:IGBT 晶體管 DISCRETE IGBT 600V 45 AMP RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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