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參數資料
型號: IXSH35N140A
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: High Voltage,High Speed IGBT(VCES為1400V的高電壓高速絕緣柵雙極晶體管)
中文描述: 70 A, 1400 V, N-CHANNEL IGBT, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁數: 1/2頁
文件大?。?/td> 69K
代理商: IXSH35N140A
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°
C to 150
°
C
35N140A 1400
35N135A 1350
35N140A 1400
35N135A 1350
V
V
V
V
V
CGR
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
Continuous
Transient
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 22
Clamped inductive load, L = 30
μ
H
70
35
A
A
A
140
I
CM
= 70
@ 960
A
V
t
(SCSOA)
V
GE
= 15 V, V
= 840 V, T
J
= 125
°
C
R
G
= 22
,
non repetitive
T
C
= 25
°
C
10
μ
s
P
C
T
J
T
T
M
d
Weight
300
W
-55 ... +150
°
C
°
C
°
C
J M
150
stg
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Features
International standard package
JEDEC TO-247
High frequency IGBT with guaranteed
Short Circuit SOA capability
Fast Fall Time for switching speeds
up to 20 kHz
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drive
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Welding
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
High power density
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
92716H (5/01)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 3 mA, V
GE
= 0 V
35N140A
35N135A
1400
1350
V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25°C
T
J
= 125°C
400
mA
mA
2
I
GES
V
CE
= 0 V, V
GE
= ±20 V
±100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
3.4
4
V
High Voltage,
High speed IGBT
Short Circuit SOA Capability
V
CES
1400 V
1350 V
I
C25
70 A
70 A
V
CE(sat)
4 V
4 V
IXSH 35N140A
IXSH 35N135A
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PDF描述
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相關代理商/技術參數
參數描述
IXSH40N60 制造商:IXYS Corporation 功能描述:Transistor IGBT N-Ch 600V 75A TO247AD
IXSH40N60A 功能描述:IGBT 晶體管 HIGH SPEED IGBT 600V, 40A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH40N60B 功能描述:IGBT 晶體管 75 Amps 600V 2.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH40N60B2D1 功能描述:IGBT HS W/DIODE 600V 48A TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿(最大):1200V Vge, Ic時的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
IXSH45N100 功能描述:IGBT 晶體管 IGBT SCSOA 1000V 50A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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