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參數資料
| 型號： | JANSR2N7488T3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對257AA） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 183K |
| 代理商： | JANSR2N7488T3 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature 300 (0.063in./1.6mm from case for 10sec)
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
18*
12
72
75
0.6
±20
80
18
7.5
8.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
4.3(Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
RADIATION HARDENED JANSR2N7488T3
POWER MOSFET 130V, N-CHANNEL
THRU-HOLE (TO-257AA)
REF: MIL-PRF-19500/705
www.irf.com
1
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHY57133CMSE 100K Rads (Si) 0.09
18A* JANSR2N7488T3
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
T0-257AA
IRHY57133CMSE
PD - 94318C
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