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參數資料
| 型號： | KSA1241 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power Amplifier Applications |
| 中文描述： | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 24K |
| 代理商： | KSA1241 |
2000 Fairchild Semiconductor International
Rev. A, February 2000
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
B
Base Current
I
C
Collector Current
P
C
Collector Dissipation (T
a
=25
°
C)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
t
ON
Turn ON Time
t
STG
Storage Time
t
F
Fall Time
h
FE
Classification
Parameter
Ratings
- 55
- 50
- 5
- 1
- 2
1
10
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°
C
°
C
Test Condition
I
C
= - 10mA, I
B
= 0
V
CB
= - 50V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 2V, I
C
= - 1.5A
I
C
= - 1A, I
B
= - 0.05A
I
C
= - 1A, I
B
= - 0.05A
V
CE
= - 2V, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
V
CC
= - 30, I
C
= - 1A
I
B1
= - I
B2
= - 0.05A
R
L
= 30
Min.
- 50
Typ.
Max.
Units
V
μ
A
μ
A
- 1
- 1
240
DC Current Gain
70
40
- 0.5
- 1.2
V
V
100
40
0.1
1
0.1
MHz
pF
μ
s
μ
s
μ
s
Classification
h
FE1
O
Y
70 ~ 140
120 ~ 240
1. Base 2. Collector 3. Emitter
KSA1241
Power Amplifier Applications
Low Collector-Emitter Saturation Voltage
Complement to KSC3076
I-PACK
1
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相關代理商/技術參數 |
參數描述 |
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| KSA1241YTU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSA1242 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Medium Power Amplifier Camera Flash Applications |
| KSA1242OTU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSA1242YTU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSA1243 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Power Amplifier Applications |
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