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參數資料
| 型號： | LFE18500X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN silicon planar epitaxial microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, FO-231, 3 PIN |
| 文件頁數： | 4/10頁 |
| 文件大小： | 62K |
| 代理商： | LFE18500X |
December 1994
4
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LFE18500X
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common emitter class AB amplifier.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 100
°
C
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
1
0.2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
collector cut-off current
collector-emitter breakdown voltage
collector-base breakdown voltage
emitter-base breakdown voltage
DC current gain
I
E
= 0; V
CB
= 20 V
I
C
= 30 mA; R
BE
= 56
I
C
= 30 mA
I
E
= 30 mA
I
C
= 1 A; V
CE
= 5 V
30
45
3
15
6
100
mA
V
V
V
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(A)
P
L1
(W)
≥
48
typ. 53
G
po
(dB)
≥
7
typ. 7.5
η
C
(%)
Z
i
; Z
L
(
)
see Figs 7
and 8
Class AB (CW)
1.85
24
0.2
typ. 42
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