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參數(shù)資料
| 型號(hào)： | LFE18500X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN silicon planar epitaxial microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, FO-231, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 62K |
| 代理商： | LFE18500X |
December 1994
6
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LFE18500X
List of components
(see Figs 3 and 4)
Notes
1.
2.
In thermal contact with TR1.
In thermal contact with DUT.
COMPONENT
DESCRIPTION
VALUE
ORDERING INFORMATION
TR1
C1, C4
C2, C3
C5, C6
C7
D1
D2
L1
transistor, BDT91 or equivalent
DC blocking chip capacitor
trimmer capacitor
feedthrough bypass capacitor
electrolytic capacitor
diode BY239 or equivalent; note 1
diode BY239 or equivalent; note 2
4 turns 0.5 mm copper wire;
internal diameter = 2 mm
3 turns 0.5 mm copper wire;
internal diameter = 2 mm
linear potentiometer
resistor
resistor
resistor
ferrite bead
100 pF
0.5 to 5.0 pF
1500 pF
10
μ
F, 50 V
ATC 100A101kp
Tekelec 727-1
Erie 1250-003
L2
P1
R1
R2
R3
F1
4.7 k
100
, 0.25 W
10 k
, 0.25 W
56
, 0.25 W
Philips tube, 12NC = 4330 030 43081
4.2 x 2.2 x 3.2 mm (4B1)
Fig.4 Class AB bias circuit.
handbook, full pagewidth
MEA600
C5
C6
L2
DUT
L1
C7
R3
D1
D2
P1
F1
R2
R1
TR1
VCC
BIAS CIRCUIT
PREMATCHING TEST
CIRCUIT
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