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參數(shù)資料
| 型號： | LTC4260IUH#PBF |
| 廠商： | Linear Technology |
| 文件頁數(shù)： | 16/30頁 |
| 文件大小： | 295K |
| 描述： | IC HOT SWAP CNTRL I2C 32-QFN |
| 標準包裝： | 73 |
| 類型： | 熱交換控制器 |
| 應(yīng)用： | 通用 |
| 內(nèi)部開關(guān)： | 無 |
| 電源電壓： | 8.5 V ~ 80 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 32-WFQFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 32-QFN 裸露焊盤（5x5） |
| 包裝： | 管件 |
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LTC4260
16
4260fc
For more information www.linear.com/LTC4260
applicaTions inForMaTion
Gate Pin Voltage
A curve of gate drive vs V
DD
is shown in the Typical Per-
formance curves. At the minimum input supply voltage
of 8.5V, the minimum gate drive voltage is 4.5V. When
the input supply voltage is higher than 20V, the gate
drive is at least 10V and a regular N-FET can be used. In
applications over a 8.5V to 20V range, a logic level N-FET
must be used to maintain adequate gate enhancement.
The GATE pin is clamped at a typical value of 15V above
the SOURCE pin.
Configuring the GPIO Pin
Table 3 describes the possible states of the GPIO pin us-
ing the control register bits A6 and A7. At power-up, the
default state is for the GPIO pin to go high impedance
when power is good (FB pin greater than 3.5V). Other uses
for the GPIO pin are to pull down when power is good,
a general purpose output and a general purpose input.
Compensating the Active Current Loop
The active current limit circuit is compensated using the
resistor R6 and the slew rate capacitor C1. The value for
C1 is calculated to limit the inrush current. The suggested
value for R6 is 100k. This value should work for most pass
FETs (Q1). If the gate capacitance of Q1 is very small then
the best method to compensate the loop is to add a H10nF
capacitor between the GATE and SOURCE terminals.The
addition of 10?resistor (R5) prevents self-oscillation in
Q1 by isolating trace capacitance from the FET's GATE
Terminal. Locate the gate resistor at, or close to, the body
of the MOSFET.
Supply Transients
The LTC4260 is designed to ride through supply transients
caused by load steps. If there is a shorted load and the
parasitic inductance back to the supply is greater than
0.5礖, there is a chance that the supply could collapse
before the active current limit circuit brings down the
GATE pin. In this case the undervoltage monitors turn
off the pass FET. The undervoltage lockout circuit has a
5祍 filter time after V
DD
drops below 7.5V. The UV pin
reacts in 2祍 to shut the GATE off, but it is recommended
to add a filter capacitor C
F
to prevent unwanted shutdown
caused by short transient. Eventually either the UV pin or
the undervoltage lockout responds to bring the current
under control before the supply completely collapses.
Supply Transient Protection
The LTC4260 is 100% tested and guaranteed to be safe from
damage with supply voltages up to 100V. However, spikes
above 100V may damage the part. During a short-circuit
condition, the large change in currents flowing through the
power supply traces can cause inductive voltage spikes
which could exceed 100V. To minimize the spikes, the
power trace inductance should be minimized by using
wider traces or heavier trace plating. Adding a snubber
circuit will dampen the voltage spikes. It is built using a
100?resistor in series with a 0.1礔 capacitor between
V
DD
and GND. A surge suppressor, Z1 in Figure 1, at the
input will clamp the voltage spikes.
Design Example
As a design example, take the following specifications:
V
IN
= 48V, I
MAX
= 5A, I
INRUSH
= 1A, C
L
= 330礔, V
UVON
= 43V, V
UVOFF
= 38.5V, V
OVOFF
= 70V, V
PWRGDUP
= 46V,
V
PWRGDDN
= 45V and I
2
C
ADDRESS
= 1010011. The selec-
tion of the sense resistor, R
S
, is set by the overcurrent
threshold of 50mV:
R
S
=
50mV
I
MAX
=
50mV
5A
= 0.010&
The FET should be sized to handle the power dissipation
during the inrush charging of the output capacitor C
OUT
.
The method used to determine the power is the principle:
E
C
= Energy in C
L
= Energy in Q1
Thus:
E
C
= 1/2 CV
2
= 1/2(0.33mF)(48V)
2
= 0.38J
Calculate the time it takes to charge up C
OUT
:
t
CHARGUP
=
C
L
" V
IN
I
INRUSH
=
330礔 " 48V
1A
=16ms
The average power dissipated in the FET:
P
DISS
=
E
C
t
CHARGUP
=
0.38J
16ms
E 24W
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