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參數(shù)資料
| 型號： | MCM6929AWJ8R |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 4 Bit Fast Static Random Access Memory |
| 中文描述： | 256K X 4 STANDARD SRAM, 8 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-32 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 119K |
| 代理商： | MCM6929AWJ8R |
MCM6929A
2
MOTOROLA FAST SRAM
TRUTH TABLE
(X = Don’t Care)
E
G
W
Mode
VDD Current
ISB1, ISB2
IDDA
IDDA
IDDA
Output
Cycle
H
X
X
Not Selected
High–Z
—
L
H
H
Output Disabled
High–Z
—
L
L
H
Read
Dout
High–Z
Read Cycle
L
X
L
Write
Write Cycle
ABSOLUTE MAXIMUM RATINGS
(See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
– 0.5 to + 4.6
V
Voltage Relative to VSS for Any Pin Except
VDD
Vin, Vout
– 0.5 to VDD + 0.5
V
Output Current
Iout
±
30
mA
Power Dissipation
PD
0.6
W
Temperature Under Bias
Tbias
– 10 to + 85
°
C
Operating Temperature
TA
0 to + 70
°
C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V +10%, – 5% TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VDD
VIH
3.135
3.3
3.6
V
Input High Voltage
2.2
—
VDD + 0.3
**
V
Input Low Voltage
VIL
– 0.5
*
—
0.8
V
*VIL (min) = –0.5 V dc; VIL (min) = –2.0 V ac (pulse width
≤
2.0 ns) for I
≤
20.0 mA.
**VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2 V ac (pulse width
≤
2.0 ns) for I
≤
20.0 mA.
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Output Leakage Current (E = VIH, Vout = 0 to VDD)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Ilkg(I)
Ilkg(O)
VOL
VOH
—
±
1.0
μ
A
—
±
1.0
μ
A
—
0.4
V
2.4
—
V
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid appli-
cation of any voltage higher than maximum
rated voltages to these high–impedance cir-
cuits.
This BiCMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
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