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參數(shù)資料
型號: MCM6929AWJ8R
廠商: MOTOROLA INC
元件分類: DRAM
英文描述: 256K x 4 Bit Fast Static Random Access Memory
中文描述: 256K X 4 STANDARD SRAM, 8 ns, PDSO32
封裝: 0.400 INCH, PLASTIC, SOJ-32
文件頁數(shù): 3/8頁
文件大小: 119K
代理商: MCM6929AWJ8R
MCM6929A
3
MOTOROLA FAST SRAM
POWER SUPPLY CURRENTS
(See Note 1)
6929A–8
6929A–10
6929A–12
6929A–15
Parameter
Symbol
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Unit
Notes
AC Active Supply Current
(Iout = 0 mA) (VDD = max, f = fmax)
IDDA
150
130
120
110
mA
2, 3, 4
Active Quiescent Current
(E = VIL, VDD = max, f = 0 MHz)
IDD2
80
80
80
80
mA
AC Standby Current
(E = VIH, VDD = max, f = fmax)
ISB1
50
45
40
35
mA
2, 3, 4
CMOS Standby Current
(VDD = max, f = 0 MHz,
E
VDD – 0.2 V,
Vin
VSS + 0.2 V, or
VDD – 0.2 V)
NOTES:
1. Typical current = 25
°
C @ 3.3 V.
2. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V).
3. All addresses transition simultaneously low (LSB) and then high (MSB).
4. Data states are all zero.
ISB2
20
20
20
20
mA
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Address Input Capacitance
Cin
Cin
CI/O
6
pF
Control Pin Input Capacitance
6
pF
Input/Output Capacitance
8
pF
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