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參數資料
| 型號： | MCM6949YJ8R |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 4 Bit Static Random Access Memory |
| 中文描述： | 1M X 4 STANDARD SRAM, 8 ns, PDSO32 |
| 封裝： | 0.400 INCH, SOJ-32 |
| 文件頁數： | 4/10頁 |
| 文件大小： | 122K |
| 代理商： | MCM6949YJ8R |
MCM6949
4
MOTOROLA FAST SRAM
TRUTH TABLE
(X = Don’t Care)
E
G
W
Mode
I/O Pin
Cycle
Current
H
X
X
Not Selected
High–Z
—
ISB1, ISB2
ICCA
ICCA
ICCA
L
H
H
Output Disabled
High–Z
—
L
L
H
Read
Dout
High–Z
Read
L
X
L
Write
Write
ABSOLUTE MAXIMUM RATINGS
(See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage Relative to VSS
Voltage Relative to VSS for Any Pin
Except VCC
VCC
Vin, Vout
– 0.5 to + 5.0
V
– 0.5 to VCC + 0.5
V
Output Current (per I/O)
Iout
±
20
mA
Power Dissipation
PD
Tbias
TA
Tstg
1.0
W
Temperature Under Bias
– 10 to + 85
°
C
Operating Temperature
0 to + 70
°
C
Storage Temperature — Plastic
– 55 to + 150
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high–impedance
circuits.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board and
transverse air flow of at least 500 linear feet per
minute is maintained.
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