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參數資料
| 型號： | MCM6949YJ8R |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 4 Bit Static Random Access Memory |
| 中文描述： | 1M X 4 STANDARD SRAM, 8 ns, PDSO32 |
| 封裝： | 0.400 INCH, SOJ-32 |
| 文件頁數： | 5/10頁 |
| 文件大小： | 122K |
| 代理商： | MCM6949YJ8R |
MCM6949
5
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 3.3 V – 5%, + 10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
VIH
VIL
3.0
3.3
3.465
V
Input High Voltage
2.2
—
VCC + 0.3
0.8
V
Input Low Voltage
– 0.5
*
—
V
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
≤
2.0 ns).
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E = VIH, Vout = 0 to VCC)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Ilkg(I)
Ilkg(O)
VOL
VOH
—
±
1.0
μ
A
—
±
1.0
μ
A
—
0.4
V
2.4
—
V
POWER SUPPLY CURRENTS
Parameter
Symbol
0 to + 70
°
C
– 40 to
+ 85
°
C
Unit
AC Active Supply Current
(Iout = 0 mA, VCC = Max)
MCM6949–8: tAVAV = 8 ns
MCM6949–10: tAVAV = 10 ns
MCM6949–12: tAVAV = 12 ns
MCM6949–15: tAVAV = 15 ns
MCM6949–8: tAVAV = 8 ns
MCM6949–10: tAVAV = 10 ns
MCM6949–12: tAVAV = 12 ns
MCM6949–15: tAVAV = 15 ns
ICC
195
165
160
155
195
175
170
165
mA
AC Standby Current (VCC = Max, E = VIH,
No Other Restrictions on Other Inputs)
ISB1
55
50
50
45
55
55
55
50
mA
CMOS Standby Current (E
≥
VCC – 0.2 V, Vin
≤
VSS + 0.2 V or
≥
VCC – 0.2 V)
(VCC = Max, f = 0 MHz)
ISB2
15
15
mA
CAPACITANCE
(f = 1.0 MHz, dV = 3.3 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance
All Inputs Except Clocks and DQs
E, G, W
Cin
Cck
4
5
6
8
pF
Input/Output Capacitance
DQ
CI/O
5
8
pF
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