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參數資料
| 型號： | MJW21194 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Power Transistors |
| 中文描述： | 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | CASE 340L-02, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 75K |
| 代理商： | MJW21194 |
MJW21193 (PNP) MJW21194 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
250
–
–
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
–
–
100
μ
Adc
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
–
–
100
μ
Adc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
–
–
100
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
4.0
2.25
–
–
–
–
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
20
8
–
–
60
–
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
–
–
2.2
Vdc
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
–
–
–
–
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
hFE
matched
(Matched pair hFE = 50 @ 5 A/5 V)
THD
–
–
0.8
0.08
–
–
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
–
–
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
–
–
500
pF
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f
T
PNP MJW21193
f
T
NPN MJW21194
IC COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
1.0
10
0.1
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0
0.1
1.0
10
1.0
VCE = 10 V
5 V
TJ = 25
°
C
ftest = 1 MHz
10 V
VCE = 5 V
TJ = 25
°
C
ftest = 1 MHz
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJW21194G | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21194G | 制造商:ON Semiconductor 功能描述:Transistor |
| MJW21195 | 功能描述:兩極晶體管 - BJT 16A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21195_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS |
| MJW21195_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors |
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