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參數資料
| 型號： | MMBD352WT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Schottky Barrier Diode |
| 中文描述： | SILICON, UHF BAND, MIXER DIODE |
| 封裝： | LEAD FREE, CASE 419-04, SC-70, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 52K |
| 代理商： | MMBD352WT1G |
Semiconductor Components Industries, LLC, 2005
April, 2005 Rev. 3
1
Publication Order Number:
MMBD352WT1/D
MMBD352WT1
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultrafast switching
circuits.
Features
Very Low Capacitance Less Than 1.0 pF @ Zero Volts
Low Forward Voltage 0.5 Volts (Typ) @ I
F
= 10 mA
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
V
R
7.0
V
CC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1)
T
A
= 25
°
C
Derate above 25
°
C
P
D
200
1.6
mW
mW/
°
C
Thermal Resistance,
JunctiontoAmbient
R
JA
625
°
C/W
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance,
JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
1. FR5 = 1.0
2. Alumina = 0.4
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
http://onsemi.com
MARKING DIAGRAM
M5
M
= Device Code
= Date Code
SOT323 (SC70)
CASE 419
STYLE 9
1
ANODE
3
CATHODE/ANODE
2
CATHODE
1
2
3
M5 M
Device
Package
Shipping
ORDERING INFORMATION
MMBD352WT1
SOT323
3000/Tape & Reel
MMBD352WT1G
SOT323
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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PDF描述 |
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| MMBD354LT1 | Dual Hot Carrier Mixer Diodes |
| MMBD452LT1G | Dual Hot−Carrier Diodes Schottky Barrier Diodes |
| MMBD6100LT1G | Monolithic Dual Switching Diode |
| MMBD6100LT3G | Monolithic Dual Switching Diode |
| MMBD7000LT1G | Dual Switching Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBD353 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD353LT1 | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD353LT1G | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD353LT3 | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD353LT3G | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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