- 您現在的位置：買賣IC網 > PDF目錄384740 > MMBD354LT1 (樂山無線電股份有限公司) Dual Hot Carrier Mixer Diodes PDF資料下載
參數資料
| 型號： | MMBD354LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual Hot Carrier Mixer Diodes |
| 中文描述： | 雙熱載流子二極管混頻器 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 45K |
| 代理商： | MMBD354LT1 |
LESHAN RADIO COMPANY, LTD.
MMBD352. 353. 354. 355LT –1/2
1
3
2
MMBD352LT1
CASE 318–08, STYLE 11
SOT– 23 (TO–236AB)
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are
suitable also for use in detector and ultra–fast switching circuits.
Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
Low Forward Voltage — 0.5 Volts (Typ) @ I
F
= 10 mA
MAXIMUM RATINGS
(EACH DIODE)
Rating
Continuous Reverse Voltage
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
(EACH DIODE)
Characteristic
OFF CHARACTERISTICS
Forward Voltage
(I
F
= 10 mAdc)
Reverse Voltage Leakage Current
(V
R
= 3.0 V)
(V
R
= 7.0 V)
Capacitance
(V
R
= 0 V, f = 1.0 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
V
R
Value
7.0
Unit
V
CC
Symbol
P
D
Max
225
Unit
mW
1.8
556
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
,T
stg
–55 to +150
Symbol
Min
Max
Unit
V
F
—
0.60
V
I
R
μ
A
—
—
0.25
10
C
—
1.0
pF
1
CATHODE
3
CATHODE/ANODE
2
ANODE
MMBD353LT1
CASE 318–08, STYLE 19
SOT– 23 (TO–236AB)
3
CATHODE
ANODE
1
2
ANODE
2
CATHODE
CATHODE
1
ANODE
3
MMBD355LT1
CASE 318–08, STYLE 12
SOT– 23 (TO–236AB)
MMBD354LT1
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
3
CATHODE/ANODE
1
ANODE
2
CATHODE
相關PDF資料 |
PDF描述 |
|---|---|
| MMBD452LT1G | Dual Hot−Carrier Diodes Schottky Barrier Diodes |
| MMBD6100LT1G | Monolithic Dual Switching Diode |
| MMBD6100LT3G | Monolithic Dual Switching Diode |
| MMBD7000LT1G | Dual Switching Diode |
| MMBD7000LT3 | Dual Switching Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBD354LT1G | 功能描述:整流器 7V 225mW Dual Common Cathode RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD354W | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD355 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD355LT1 | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD355LT1G | 功能描述:整流器 7V 225mW Dual Common Anode RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。