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參數資料
| 型號： | MMBD452LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Hot−Carrier Diodes Schottky Barrier Diodes |
| 中文描述： | SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 61K |
| 代理商： | MMBD452LT1G |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 3
1
Publication Order Number:
MMBD452LT1/D
MMBD452LT1
Preferred Device
Dual HotCarrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for highefficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for lowcost, highvolume consumer
and industrial/commercial requirements.
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 125
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
30
V
Forward Power Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
F
225
1.8
mW
mW/
°
C
Operating Junction Temperature Range
T
J
55 to +125
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
V
(BR)R
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 A)
30
V
Total Capacitance
(V
R
= 15 V, f = 1.0 MHz) Figure 1
C
T
0.9
1.5
pF
Reverse Leakage
(V
R
= 25 V) Figure 3
I
R
13
200
nAdc
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
V
F
0.38
0.45
Vdc
Forward Voltage
(I
F
= 10 mAdc) Figure 4
V
F
0.52
0.6
Vdc
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 11
Preferred
devices are recommended choices for future use
and best overall value.
1
2
3
Device
Package
Shipping
ORDERING INFORMATION
MMBD452LT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBD452LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
5N M
5N = Device Code
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
3
CATHODE/ANODE
1
ANODE
2
CATHODE
30 VOLTS
DUAL HOTCARRIER
DETECTOR AND SWITCHING
DIODES
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBD452LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Hot-Carrier Diodes Schottky Barrier Diodes |
| MMBD495A | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY BARRIER |
| MMBD495C | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY BARRIER |
| MMBD495S | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY BARRIER |
| MMBD5004A-7 | 功能描述:MOSFET HiVolt Switching Dio 100V SOT23 T&R 3K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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