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參數資料
| 型號： | MMBT2222AE |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR |
| 中文描述： | 晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 218K |
| 代理商： | MMBT2222AE |
C
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
B E
1. BASE
2. EMITTER
3. COLLECTOR
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBT2222AE
TRANSISTOR
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
Complementary PN
P
Type available (MMBT2907AE)
PPLICATION
general purpose amplifier, switching.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1P
C
1P
B E
MAXIMUM RATINGS
T
A
=
25
℃
unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current -Continuous
P
C
Collector Dissipation
T
J
Junction Temperature
T
stg
Storage Temperature
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Value
75
40
6
600
150
150
-55to+150
（
Tamb=25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
Units
V
V
V
mA
mW
℃
℃
℃
unless otherwise specified
Test conditions
I
C
= 10
μ
A,I
E
=0
I
C
= 10mA, I
B
=0
I
E
=10
μ
A,I
C
=0
V
CB
=70 V,I
E
=0
V
CE
=60V,V
BE(off)
=3V
V
EB
= 3V,I
C
=0
V
CE
=10V,I
C
= 0.1mA
V
CE
=10V,I
C
= 1mA
V
CE
=10V,I
C
= 10mA
V
CE
=10V,I
C
= 150mA
V
CE
=10V,I
C
= 500mA
I
C
=500mA,I
B
= 50mA
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
= 50mA
I
C
=150mA,I
B
=15mA
V
CE
=20V, I
C
= 20mA
f=
100MHz
）
MIN
75
40
TYP
MAX
UNIT
V
V
V
μ
A
μ
A
μ
A
6
35
50
75
100
40
0.1
0.1
0.1
400
1
0.3
2
1.2
DC current gain
Collector-emitter saturation voltage
V
CE
(sat)
V
Base-emitter saturation voltage
V
BE
(sat)
V
Transition frequency
f
T
300
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=
0
, f=
1M
Hz
8
pF
Noise figure
NF
V
CB
=10V,I
c
=0.1mA,
f=1KHz,Rs=1K
4
dB
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| MMBT2222AF065 | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans GP BJT NPN 40V 1A 3-Pin SOT-23 T/R |
| MMBT2222A-G | 功能描述:射頻雙極電源晶體管 VCEO=40V IC=600mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發射極最大電壓 VCEO:25 V 發射極 - 基極電壓 VEBO:4 V 集電極連續電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MMBT2222AG-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| MMBT2222AG-AL3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| MMBT2222AG-AN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
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