- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385626 > MMBT3906TT1 (ON SEMICONDUCTOR) General Purpose Transistors PNP Silicon(PNP型通用晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | MMBT3906TT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | General Purpose Transistors PNP Silicon(PNP型通用晶體管) |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 463-01, SC-75, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 86K |
| 代理商： | MMBT3906TT1 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 1
1
Publication Order Number:
MMBT3906TT1/D
MMBT3906TT1
General Purpose
Transistors
PNP Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT416/SC75 package which is
designed for low power surface mount applications.
Features
PbFree Package is Available
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
40
Vdc
CollectorBase Voltage
V
CBO
40
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR4 Board (Note 1) @T
A
= 25
°
C
Derated above 25
°
C
P
D
200
1.6
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
(Note 1)
R
JA
600
°
C/W
Total Device Dissipation,
FR4 Board (Note 2) @T
A
= 25
°
C
Derated above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
(Note 2)
R
JA
400
°
C/W
Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ Minimum Pad
2. FR4 @ 1.0
×
1.0 Inch Pad
Device
Package
Shipping
ORDERING INFORMATION
MMBT3906TT1
SOT416
CASE 463
SOT416/SC75
STYLE 1
3000 / Tape & Reel
MARKING DIAGRAM
3
2
1
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
2A M
2A
M
= Device Code
= Date Code*
= PbFree Package
1
MMBT3906TT1G
SOT416
(PbFree)
3000 / Tape & Reel
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT4124LT1 | General Purpose Transistor NPN Silicon(硅NPN通用晶體管) |
| MMBT489LT1 | High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications |
| MMBT489LT1_06 | High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications |
| MMBT489LT1G | High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications |
| MMBT5550LT1 | High Voltage Transistors NPN Silicon(NPN型高電壓晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906TT1G | 功能描述:兩極晶體管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906TT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MMBT3906T-TP | 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906W | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:General Purpose Transistor |
| MMBT3906W_10 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:PNP GENERAL PURPOSE SWITCHING TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。